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18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD Chip Device Layout
Features
High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 120 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table 5 MTTF Table 5
(5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f ) Input Return Loss (S11) 3 Output Return Loss (S22) 3 Small Signal Gain (S21)3 Gain Flatness ( S21) Reverse Isolation (S12) 3 Noise Figure (NF) 4 Output Power for 1 dB Compression (P1dB) 1,2,3 Output Third Order Intercept Point (OIP3) 1,2,3 Saturated Output Power (Psat)1,2,3 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1,2) Supply Current (Id) (Vd=3.5V, Vg=-0.3V Typical) Units GHz dB dB dB dB dB dB dBm dBm dBm VDC VDC mA Min. 18.0 4.0 7.0 19.0 40.0 +14.0 -1.2 Typ. 14.0 12.0 21.0 +/-2.0 50.0 3.2 +15.0 +25.0 +18.0 +3.5 -0.3 50 Max. 38.0 27.0 4.5 +5.5 +0.1 100
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3. (2) Measured using constant current. (3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA. (4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Buffer Amplifier Measurements
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices
27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 16.0 0 -10
Reverse Isolation (dB)
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices
-20 -30 -40 -50 -60 -70 -80 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Gain (dB)
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices
0 0
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~190 Devices
Output Return Loss (dB)
-5 -10 -15 -20 -25 -30 16.0
Input Return Loss (dB)
-5 -10 -15 -20 -25 -30 -35 16.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~210 Devices
16 15 18 17
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~30 Devices
Output Power P1dB (dBm)
Output Power Psat (dBm)
14 13 12 11 10 9 8 7 6 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
16 15 14 13 12 11 10 9 8 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~200 Devices
7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 16.0
Noise Figure (dB)
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Buffer Amplifier Measurements (cont.)
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices
27 26 0 -10
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices
Reverse Isolation (dB)
20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0
25 24
-20 -30 -40 -50 -60 -70 -80 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0
Gain (dB)
23 22 21 20 19 18 17 18.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices
0
Output Return Loss (dB)
XB1006-BD Vd1,2=3.5 V Id1=25 mA, Id2=25 mA ~810 Devices
0 -5 -10 -15 -20 -25 -30 18.0
-5
Input Return Loss (dB)
-10 -15 -20 -25 -30 -35 -40 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Buffer Amplifier Measurements (cont.)
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices
29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 16.0
Reverse Isolation (dB)
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices
0 -10 -20 -30 -40 -50 -60 -70 -80 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Gain (dB)
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices
0
Input Return Loss (dB)
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~190 Devices
0
Output Return Loss (dB)
-5 -10 -15 -20 -25 -30 16.0
-5 -10 -15 -20 -25 16.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~210 Devices
21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 16.0
22 21 Output Power Psat (dBm) 20 19 18 17 16 15 14 13 12 16.0 Output Power P1dB (dBm)
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~30 Devices
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma
Max
Frequency (GHz) Median Mean -3sigma
XB1006-BD Vd1,2=5.5 V Id1=50 mA, Id2=50 mA ~200 Devices
9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 16.0
Noise Figure (dB)
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz) Max Median Mean -3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Buffer Amplifier Measurements (cont.)
XB1006-BD_S21 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=27mA
28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) 34 36 38 40 42 44
XB1006-BD_S12 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) 34 36 38 40 42 44
XB1006-BD_S11 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) 34 36 38 40 42 44
XB1006-BD_S22 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 14 16 18 20 22 24 26 28 30 32 Frequency (GHz) 34 36 38 40 42 44
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
S-Parameters
Typical S-Parameter Data for XB1006-BD Vd=3.5 V, Id1=25 mA, Id2=25 mA Frequency (GHz) 0.50000 1.24250 1.98500 2.72750 3.47000 4.21250 4.95500 5.69750 6.44000 7.18250 7.92500 8.66750 9.41000 10.15300 10.89500 11.63700 12.38000 13.12300 13.86500 14.60800 15.35000 16.09300 16.83500 17.57800 18.32000 19.06300 19.80500 20.54700 21.29000 22.03200 22.77500 23.51700 24.26000 25.00300 25.74500 26.48800 S11 Mag dB -0.01 -0.02 -0.05 -0.06 -0.06 -0.07 -0.08 -0.08 -0.10 -0.11 -0.13 -0.15 -0.18 -0.22 -0.26 -0.32 -0.40 -0.51 -0.68 -0.99 -1.45 -2.19 -3.18 -4.70 -6.78 -9.56 -12.54 -15.22 -16.54 -17.11 -17.55 -18.58 -21.05 -25.97 -29.89 -27.51 S11 Phase Ang -0.29 -5.97 -11.39 -16.82 -22.34 -27.94 -33.66 -39.53 -45.53 -51.65 -58.15 -64.83 -71.83 -79.27 -87.16 -95.68 -105.00 -115.16 -126.77 -140.05 -154.85 -171.62 169.23 147.05 121.63 93.00 59.48 20.64 -19.05 -54.31 -79.68 -102.87 -120.90 -127.59 -94.55 -57.28 S12 Mag dB -78.68 -55.36 -47.08 -33.88 -34.52 -41.53 -50.48 -57.08 -58.91 -50.90 -38.14 -28.68 -20.83 -14.04 -8.04 -2.71 1.96 5.95 9.27 11.96 14.17 16.00 17.58 18.82 19.67 20.28 20.75 20.98 21.11 21.20 21.29 21.42 21.49 21.55 21.73 21.94 S12 Phase S21 Mag Ang dB 8.90 -77.37 -27.84 -97.96 131.76 -99.03 23.33 -90.81 -78.78 -86.32 -128.85 -82.39 -131.07 -73.36 -85.12 -73.18 -23.44 -71.12 73.26 -68.50 90.65 -68.92 83.41 -63.09 68.82 -59.82 49.43 -58.10 26.33 -56.47 0.09 -56.05 -28.91 -55.15 -59.68 -53.23 -91.70 -52.12 -123.78 -51.94 -155.15 -51.66 174.27 -52.01 144.27 -53.65 114.12 -52.78 84.88 -53.35 57.17 -52.52 30.12 -53.50 4.36 -52.49 -19.88 -51.43 -43.04 -50.69 -65.10 -50.48 -86.84 -49.25 -108.11 -48.36 -128.72 -47.55 -148.87 -49.21 -169.44 -49.14 S21 Phase Ang -176.19 -18.44 10.31 -69.68 62.90 12.94 -32.06 -28.90 -52.31 -52.25 -59.64 -58.13 -74.90 -93.36 -111.16 -117.90 -134.10 -142.49 -157.28 -174.08 178.20 157.70 160.00 154.41 146.89 145.73 144.77 140.88 138.82 129.44 124.99 123.36 107.54 93.53 79.52 67.70 S22 Mag dB -0.02 -0.22 -1.13 -4.42 -4.06 -1.73 -1.31 -1.37 -1.56 -1.80 -2.07 -2.38 -2.71 -3.11 -3.61 -4.32 -5.32 -6.76 -8.66 -10.98 -13.48 -15.68 -17.38 -18.61 -19.09 -18.76 -18.80 -18.73 -18.36 -17.87 -16.93 -16.02 -15.57 -15.23 -14.52 -13.99 S22 Phase Ang -2.04 -36.80 -70.98 -97.96 -86.96 -108.69 -131.13 -149.61 -165.64 179.86 166.35 153.33 140.43 127.22 113.42 98.77 83.34 67.76 53.13 41.18 32.59 27.86 22.98 18.88 11.20 -4.30 -22.95 -42.86 -61.50 -78.95 -92.61 -108.44 -121.50 -132.33 -141.30 -150.67
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
S-Parameters (cont.)
Typical S-Parameter Data for XB1006-BD Vd=3.5 V, Id1=25 mA, Id2=25 mA Frequency (GHz) 27.23000 27.97300 28.71500 29.45800 30.20000 30.94200 31.68500 32.42800 33.17000 33.91300 34.65500 35.39800 36.14000 36.88300 37.62500 38.36800 39.11000 39.85200 40.59500 41.33700 42.08000 42.82200 43.56500 44.30700 45.05000 S11 Mag dB -23.18 -20.24 -17.68 -15.93 -14.78 -13.90 -12.79 -11.58 -10.38 -9.61 -9.24 -8.53 -8.26 -7.66 -7.09 -5.94 -4.96 -4.73 -4.49 -4.38 -4.10 -3.84 -3.84 -3.61 -3.44 S11 Phase S12 Mag Ang dB -58.03 -57.14 -70.31 -85.00 -98.59 -114.29 -130.42 -148.09 -169.13 168.38 150.01 131.44 114.42 101.05 90.20 78.00 63.52 50.11 39.33 30.28 21.30 14.19 6.00 -1.31 -8.97 22.04 22.17 22.34 22.49 22.63 22.78 23.03 23.28 23.39 23.26 23.18 22.99 23.21 23.65 23.83 22.32 18.86 14.56 9.90 5.25 0.58 -4.39 -9.71 -15.12 -17.19 S12 Phase S21 Mag Ang dB 169.35 149.03 128.56 107.61 86.72 65.37 43.74 20.80 -4.06 -28.70 -53.03 -77.65 -102.42 -133.11 -171.52 143.51 102.53 69.36 43.68 23.02 6.42 -5.56 -11.55 -0.23 21.22 -51.07 -52.87 -53.75 -57.28 -62.67 -61.11 -57.27 -50.81 -50.09 -49.02 -47.85 -46.07 -45.46 -45.22 -43.57 -43.98 -47.57 -50.77 -54.23 -51.35 -45.02 -46.84 -43.78 -45.30 -49.42 S21 Phase Ang 54.80 47.91 29.22 7.05 -31.77 -92.67 -144.70 -169.03 155.22 141.03 148.60 123.72 109.96 102.42 80.60 58.51 24.79 46.25 74.76 68.33 53.96 40.42 -0.02 -10.20 -27.63 S22 Mag dB -13.51 -13.50 -13.55 -13.69 -14.33 -14.82 -16.38 -17.81 -17.54 -17.39 -17.39 -14.80 -12.72 -10.07 -6.86 -4.77 -4.42 -4.69 -5.28 -5.75 -5.91 -6.02 -5.92 -5.66 -5.65 S22 Phase Ang -163.64 -174.19 176.51 166.23 154.91 145.28 135.57 133.09 133.68 126.24 122.78 110.38 88.54 66.35 33.29 -4.19 -38.32 -64.56 -82.81 -95.66 -104.65 -112.58 -119.63 -124.45 -130.14
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
0.853 (0.034) 1.453 (0.057)
Mechanical Drawing
1.298 (0.051) 0.950 (0.037)
2 1
3
4 6
0.0 0.671 (0.026)
0.376 (0.015)
0.0
5
1.270 (0.050) 2.000 (0.079)
(Note: Engineering designator is 28LN3UA0102)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.612 mg. Bond Pad #1 (RF In) Bond Pad #3 (Vd2) Bond Pad #5 (Vg2) Bond Pad #2 (Vd1) Bond Pad #4 (RF Out) Bond Pad #6 (Vg1)
Bias Arrangement
Vd1 Vd2
2
RF In
3
Bypass Capacitors - See App Note [2]
1
4 6
Vg1
RF Out
5
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
App Note [1] Biasing - As shown in the bonding diagram, this device can be operated with all three stages in parallel, and can be biased for low noise performance or high power performance. Low noise bias is nominally Vd=3.5V, Id=50mA. More controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 3.5V, 25mA. Power bias may be as high as Vd=5.5V, Id=100mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V, 50mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pf ) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature 83.0 deg Celsius 105.1 deg Celsius 127.0 deg Celsius
Rth
MTTF Hours
FITs
159.9 C/W 171.9 C/W 182.6 C/W
8.28E+10 5.33E+09 4.75E+08
1.21E-02 1.88E-01 2.11E+00
Bias Conditions: Vd1=Vd2=3.5V, Id1=25 mA, Id2=25 mA Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 149.1 deg Celsius 175.4 deg Celsius 201.0 deg Celsius Rth MTTF Hours FITs
171.2 C/W 182.5 C/W 192.8 C/W
8.14E+07 7.93E+06 1.04E+06
1.23E+01 1.26E+02 9.63E+02
Bias Conditions: Vd1=Vd2=5.5V, Id1=50 mA, Id2=50mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 9 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Device Schematic
Vd1
R=12.5 R=7.14 R=5
Vd2
R=5
R=16.7
R=10
R=5
2 1
R=5
RF Out
2 3
1 2
RF In
1
3
3
R=20
R=20
R=30
R=30
R=30
Vg1
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 10 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
18.0-38.0 GHz GaAs MMIC Buffer Amplifier
February 2008 - Rev 25-Feb-08
B1006-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering XB1006-BD-000V XB1006-BD-000W XB1006-BD-EV1
Description
Where "V" is RoHS compliant die packed in vacuum release gel paks Where "W" is RoHS compliant die packed in waffle trays XB1006 die evaluation module
Caution: ESD Sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 11 of 11
Characteristic Data and Specifications are subject to change without notice. (c)2008 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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